論文

1999

  1. Seizo Morita, Yasuhiro Sugawara, Shigeki Orisaka, and Takayuki Uchihashi, "Missing Ag Atom on Si (111)√ 3×√ 3–Ag Surface Observed by Noncontact Atomic Force Microscopy", Jpn. J. Appl. Phys. 38, L1342-L1344 (1999). DOI: 10.1143/JJAP.38.L1342.
  2. Takayuki Uchihashi, Takao Okada, Yasuhiro Sugawara, Kousuke Yokoyama, Seizo Morita, "Self-assembled monolayer of adenine base on graphite studied by noncontact atomic force microscopy", Phys. Rev. B 60, 8309-8313 (1999). DOI: 10.1103/PhysRevB.60.8309.
  3. Yasuhiro Sugawara, Tetsuya Minobe, Shigeki Orisaka, Takayuki Uchihashi, Takahiro Tsukamoto, and Seizo Morita, "Non‐contact AFM images measured on Si (111)√ 3×√ 3‐Ag and Ag (111) surfaces", Sur. Interface Anal. 27, 456-461 (1999). DOI: 10.1002/(SICI)1096-9918(199905/06)27:5/6 <456::AID-SIA536 ≷3.0.CO;2-I.
  4. Takayuki Uchihashi, Yasuhiro Sugawara, Takahiro Tsukamoto, Tetsuya Minobe, Shigeki Orisaka, Takao Okada, and Seizo Morita, "Imaging of chemical reactivity and buckled dimers on Si (100) 2× 1 reconstructed surface with noncontact AFM", Appl. Sur. Sci. 140, 304-308 (1999). DOI: 10.1016/S0169-4332(98)00545-5.
  5. Tetsuya Minobe, Takayuki Uchihashi, Takahiro Tsukamoto, Shigeki Orisaka, Yasuhiro Sugawara, and Seizo Morita, "Distance dependence of noncontact-AFM image contrast on Si (111) 3× 3–Ag structure", Appl. Sur. Sci. 140, 298-303 (1999). DOI: 10.1016/S0169-4332(98)00544-3.
  6. Yasuhiro Sugawara, Takayuki Uchihashi, Masayuki Abe, and Seizo Morita, "True atomic resolution imaging of surface structure and surface charge on the GaAs (110)", Appl. Sur. Sci. 140, 371-375 (1999). DOI: 10.1016/S0169-4332(98)00557-1.
  7. Shigeki Orisaka, Tetsuya Minobe, Takayuki Uchihashi, Yasuhiro Sugawara, and Seizo Morita, "The atomic resolution imaging of metallic Ag (111) surface by noncontact atomic force microscope", Appl. Sur. Sci. 140, 243-246 (1999). DOI: 10.1016/S0169-4332(98)00534-0.

1997

  1. Takayuki Uchihashi, Yasuhiro Sugawara, Takafumi Tsukamoto, Masahiro Ohta, Seizo Morita, and Mineharu Suzuki, "Role of a covalent bonding interaction in noncontact-mode atomic-force microscopy on Si (111) 7× 7", Phys. Rev. B 56, 9834-9840 (1997). DOI: 10.1103/PhysRevB.56.9834.
  2. Masayuki Abe, Takayuki Uchihashi, Masahiro Ohta, Hitoshi Ueyama, Yasuhiro Sugawara, and Seizo Morita, "Detection mechanism of an optical evanescent field using a noncontact mode atomic force microscope with a frequency modulation detection method", J. Vac. Sci. Technol. B 15, 1512-1515 (1997). DOI: 10.1116/1.589485.
  3. Takayuki Uchihashi, Masahiro Ohta, Yasuhiro Sugawara, Yoshio Yanase, Tatsuhiko Sigematsu, Mineharu Suzuki, and Seizo Morita, "Development of ultrahigh vacuum-atomic force microscopy with frequency modulation detection and its application to electrostatic force measurement", J. Vac. Sci. Technol. B 15, 1543-1546 (1997). DOI: 10.1116/1.589396.
  4. Takayuki Uchihashi, Akihiko Nakano, Tohru Ida, Yasuko Andoh, Reizo Kaneko, Yasuhiro Sugawara, and Seizo Morita, "Charge dissipation on chemically treated thin silicon oxide in air", Jpn. J. Appl. Phys. 15, 3755-3758 (1997). DOI: 10.1143/JJAP.36.3755.
  5. Yasuhiro Sugawara, Hitoshi Ueyama, Takayuki Uchihashi, Masahiro Ohta, Seizo Morita, Mineharu Suzuki, and Shuzo Mishima, "True atomic resolution imaging with noncontact atomic force microscopy", Appl. Sur. Sci. 113, 364-370 (1997). DOI: 10.1016/S0169-4332(96)00877-X.
  6. Masayuki Abe, Takayuki Uchihashi, Masahiro Ohta, Hitoshi Ueyama, Yasuhiro Sugawara, and Seizo Morita, "Measurement of the evanescent field using noncontact mode atomic force microscope", Opt. Rev. 4, A232-A235 (1997). DOI: 10.1007/BF02936033.

1996

  1. Yasuhiro Sugawara, Takeshi Tsuyuguchi, Takayuki Uchihashi, Takahiro Okusako, Yoshinobu Fukano, Yoshiki Yamanishi, Takahiko Oasa, and Seizo Morita, "Density saturation of densely contact-electrified negative charges on a thin silicon oxide sample due to the Coulomb repulsive force, Philos. Mag. A 74, 1339-1346 (1996). DOI: 10.1080/01418619608239733.
  2. Seizo Morita, Takayuki Uchihashi, Takahiro Okusako, Yoshiki Yamanishi, Takahiko Oasa, and Yasuhiro Sugawara, "Stability of densely contact-electrified charges on thin silicon oxide in air", Jpn. J. Appl. Phys. 35, 5811-5814 (1996). DOI: 10.1143/JJAP.35.5811.
  3. Takayuki Uchihashi, Takahiro Okusako, Yasuhiro Sugawara, Yoshiki Yamanishi, Takahiko Oasa, and Seizo Morita, "Proximity effects of negative charge groups contact‐electrified on thin silicon oxide in air", J. Appl. Phys. 79, 4174-4177 (1996). DOI: 10.1063/1.361784.
  4. Yoshinobu Fukano, Yasuhiro Sugawara, Takayuki Uchihashi, Takahiro Okusako, Seizo Morita, Yoshiki Yamanishi, and Takahiko Oasa, "Phase transition of contact-electrified negative charges on a thin silicon oxide in air", Jpn. J. Appl. Phys. 35, 2394-2401 (1996). DOI: 10.1143/JJAP.35.2394.
  5. Takayuki Uchihashi, Takahiro Okusako, Yasuhiro Sugawara, Yoshiki Yamanishi, Takahiko Oasa, and Seizo Morita, "Correlation between contact‐electrified charge groups on a thin silicon oxide", J. Vac. Sci. Technol. B 14, 1055-1059 (1996). DOI: 10.1116/1.588399.
  6. Masayuki Abe, Takayuki Uchihashi, Masahiro Ohta, Hitoshi Ueyama, Yasuhiro Sugawara, and Seizo Morita, "Measurement of the evanescent field using noncontact mode atomic force microscope", Opt. Rev. 4, A232-A235 (1997). DOI: 10.1007/BF02936033.

1994

  1. Yoshinobu Fukano, Takayuki Uchihashi, Takahiro Okusako, Ayumi Chayahara, Yasuhiro Sugawara, Yoshiki Yamanishi, Takahiko Oasa, and Seizo Morita, "Parameter dependence of stable state of densely contact-electrified electrons on thin silicon oxide", Jpn. J. Appl. Phys. 33, 6739-6745 (1994). DOI: 10.1143/JJAP.33.6739.
  2. Takayuki Uchihashi, Yoshinobu Fukano, Yasuhiro Sugawara, Seizo Morita, Akihiko Nakano, Tohru Ida, and Takao Okada, "Potentiometry Combined with Atomic Force Microscope", Jpn. J. Appl. Phys. 33, L1562-L1564 (1994). DOI: 10.1143/JJAP.33.L1562.
  3. Takayuki Uchihashi, Takahiro Okusako, Takeshi Tsuyuguchi, Yasuhiro Sugawara, Masaru Igarashi, Reizo Kaneko, and Seizo Morita, "Charge Storage on Thin SrTiO3 Film by Contact Electrification", Jpn. J. Appl. Phys. 33, 5573-5576 (1994). DOI: 10.1143/JJAP.33.5573.
  4. Takayuki Uchihashi, Takahiro Okusako, Yasuhiro Sugawara, Yoshiki Yamanishi, Takahiko Oasa, and Seizo Morita, "Heat treatment and steaming effects of silicon oxide upon electron dissipation on silicon oxide surface", Jpn. J. Appl. Phys. 33, L1128-L1130 (1994). DOI: 10.1143/JJAP.33.L1128.
  5. Takeshi Tsuyuguchi, Takayuki Uchihashi, Takahiro Okusako, Yasuhiro Sugawara, Seizo Morita, Yoshiki Yamanishi, and Takahiko Oasa, "Contact electrification on thin silicon oxide in vacuum", Jpn. J. Appl. Phys. 33, L1046-L1048 (1994). DOI: 10.1143/JJAP.33.L1046.
  6. Takahiro Okusako, Takayuki Uchihashi, Akihiko Nakano, Toru Ida, Yasuhiro Sugawara, and Seizo Morita, "Dissipation of contact electrified electrons on dielectric thin films with silicon substrate", Jpn. J. Appl. Phys. 33, L959-L961 (1994). DOI: 10.1143/JJAP.33.L959.
  7. Yoshinobu Fukano, Koji Hontani, Takayuki Uchihashi, Takahiro Okusako, Ayumi Chayahara, Yasuhiro Sugawara, Yoshiki Yamanishi, Takahiko Oasa, and Seizo Morita, "Time dependent dielectric breakdown of thin silicon oxide using dense contact electrification", Jpn. J. Appl. Phys. 33, 3756-3760 (1994). DOI: 10.1143/JJAP.33.3756.
  8. Yasuhiro Sugawara, Yoshinobu Fukano, Takayuki Uchihashi, Takahiro Okusako, Seizo Morita, Yoshiki Yamanishi, Takahiko Oasa, and Takao Okada, "Atomic force microscopy studies of contact‐electrified charges on silicon oxide film", J. Vac. Sci. Technol. B 12, 1627-1630 (1994). DOI: 10.1116/1.587247.
  9. Takayuki Uchihashi, Takahiro Okusako, Junji Yamada, Yoshinobu Fukano, Yasuhiro Sugawara, Masaru Igarashi, Reizo Kaneko, and Seizo Morita, "Contact electrification on thin SrTiO3 film by atomic force microscope", Jpn. J. Appl. Phys. 33, L374-L376 (1994). DOI: 10.1143/JJAP.33.L374.
  10. Seizo Morita, Yoshinobu Fukano, Takayuki Uchihashi, Yasuhiro Sugawara, Yoshiki Yamanishi, and Takahiko Oasa, "Dissipation of contact-electrified charge on thin Si-oxide studied by atomic force microscopy", Appl. Surf. Sci. 75, 151-156 (1994). DOI: 10.1016/0169-4332(94)90152-X.
  11. Yoshinobu Fukano, Takayuki Uchihashi, Takahiro Okusako, Ayumi Chayahara, Yasuhiro Sugawara, Yoshiki Yamanishi, Takahiko Oasa, and Seizo Morita "Time evolution of contact-electrified electron dissipation on silicon oxide surface investigated using noncontact atomic force microscope", Jpn. J. Appl. Phys. 33, 379-382 (1994). DOI: 10.1143/JJAP.33.379.
  12. Yasuhiro Sugawara, Seizo Morita, Yoshinobu Fukano, Takayuki Uchihashi, Takahiro Okusako, Ayumi Chayahara, Yoshiki Yamanishi, and Takahiko Oasa "Spatial distributions of densely contact-electrified charges on a thin silicon oxide", Jpn. J. Appl. Phys. 33, L74-L77 (1994). DOI: 10.1143/JJAP.33.L74.
  13. Yasuhiro Sugawara, Seizo Morita, Yoshinobu Fukano, Takayuki Uchihashi, Takahiro Okusako, Ayumi Chayahara, Yoshiki Yamanishi, and Takahiko Oasa "Spatial distribution and its phase transition of densely contact-electrified electrons on a thin silicon oxide", Jpn. J. Appl. Phys. 33, L70-L73 (1994). DOI: 10.1143/JJAP.33.L70.
  14. Seizo Morita, Yasuhiro Sugawara, Yoshinobu Fukano, Takayuki Uchihashi, Takahiro Okusako, Ayumi Chayahara, Yoshiki Yamanishi, and Takahiko Oasa "Stable-Unstable Phase Transition of Densely Contract-Electrified Electrons on Thin Silicon Oxide", Jpn. J. Appl. Phys. 32, L1852-L1854 (1993). DOI: 10.1143/JJAP.33.L70.

1993

  1. Seizo Morita, Yasuhiro Sugawara, Yoshinobu Fukano, Takayuki Uchihashi, Takahiro Okusako, Ayumi Chayahara, Yoshiki Yamanishi, and Takahiko Oasa "Stable-Unstable Phase Transition of Densely Contract-Electrified Electrons on Thin Silicon Oxide", Jpn. J. Appl. Phys. 32, L1852-L1854 (1993). DOI: 10.1143/JJAP.32.L1852.
  2. Seizo Morita, Yoshinobu Fukano, Takayuki Uchihashi, Takahiro Okusako, Yasuhiro Sugawara, Yoshiki Yamanishi, and Takahiko Oasa "Reproducible and controllable contact electrification on a thin insulator", Jpn. J. Appl. Phys. 32,L1701-L1703 (1993). DOI: 10.1143/JJAP.32.L1701.